Local interconnect layer with device within second dielectric material, and related methods

Embodiments of the disclosure provide an integrated circuit (IC) structure, including a device layer including a device on a substrate. A local interconnect layer is over the device layer, and includes a first dielectric material over the substrate. The first dielectric material has a first effectiv...

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Hauptverfasser: Vanukuru, Venkata N. R, Stamper, Anthony K, Shank, Steven M
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creator Vanukuru, Venkata N. R
Stamper, Anthony K
Shank, Steven M
description Embodiments of the disclosure provide an integrated circuit (IC) structure, including a device layer including a device on a substrate. A local interconnect layer is over the device layer, and includes a first dielectric material over the substrate. The first dielectric material has a first effective dielectric constant. A second dielectric material is over the device and adjacent the first dielectric material. The second dielectric material has a second effective dielectric constant less than the first effective dielectric constant.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11574863B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11574863B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11574863B23</originalsourceid><addsrcrecordid>eNqNi70KAjEQhNNYiPoOa6_Fef7VimJhp1YWx7IZuYVcciRB8e0N4gNYzQzfN0NzPwdhR-ozogTvIZkcvxHppbkli6cKvl09JRTFklW44kUV6rj8lN2MuIAIV7alDrkNNo3N4MEuYfLLkZkeD9f9aY4-NEg9Czxyc7tU1Wqz3K7r3aL-x_kAiXw7xg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Local interconnect layer with device within second dielectric material, and related methods</title><source>esp@cenet</source><creator>Vanukuru, Venkata N. R ; Stamper, Anthony K ; Shank, Steven M</creator><creatorcontrib>Vanukuru, Venkata N. R ; Stamper, Anthony K ; Shank, Steven M</creatorcontrib><description>Embodiments of the disclosure provide an integrated circuit (IC) structure, including a device layer including a device on a substrate. A local interconnect layer is over the device layer, and includes a first dielectric material over the substrate. The first dielectric material has a first effective dielectric constant. A second dielectric material is over the device and adjacent the first dielectric material. The second dielectric material has a second effective dielectric constant less than the first effective dielectric constant.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230207&amp;DB=EPODOC&amp;CC=US&amp;NR=11574863B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230207&amp;DB=EPODOC&amp;CC=US&amp;NR=11574863B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Vanukuru, Venkata N. R</creatorcontrib><creatorcontrib>Stamper, Anthony K</creatorcontrib><creatorcontrib>Shank, Steven M</creatorcontrib><title>Local interconnect layer with device within second dielectric material, and related methods</title><description>Embodiments of the disclosure provide an integrated circuit (IC) structure, including a device layer including a device on a substrate. A local interconnect layer is over the device layer, and includes a first dielectric material over the substrate. The first dielectric material has a first effective dielectric constant. A second dielectric material is over the device and adjacent the first dielectric material. The second dielectric material has a second effective dielectric constant less than the first effective dielectric constant.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi70KAjEQhNNYiPoOa6_Fef7VimJhp1YWx7IZuYVcciRB8e0N4gNYzQzfN0NzPwdhR-ozogTvIZkcvxHppbkli6cKvl09JRTFklW44kUV6rj8lN2MuIAIV7alDrkNNo3N4MEuYfLLkZkeD9f9aY4-NEg9Czxyc7tU1Wqz3K7r3aL-x_kAiXw7xg</recordid><startdate>20230207</startdate><enddate>20230207</enddate><creator>Vanukuru, Venkata N. R</creator><creator>Stamper, Anthony K</creator><creator>Shank, Steven M</creator><scope>EVB</scope></search><sort><creationdate>20230207</creationdate><title>Local interconnect layer with device within second dielectric material, and related methods</title><author>Vanukuru, Venkata N. R ; Stamper, Anthony K ; Shank, Steven M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11574863B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Vanukuru, Venkata N. R</creatorcontrib><creatorcontrib>Stamper, Anthony K</creatorcontrib><creatorcontrib>Shank, Steven M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vanukuru, Venkata N. R</au><au>Stamper, Anthony K</au><au>Shank, Steven M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Local interconnect layer with device within second dielectric material, and related methods</title><date>2023-02-07</date><risdate>2023</risdate><abstract>Embodiments of the disclosure provide an integrated circuit (IC) structure, including a device layer including a device on a substrate. A local interconnect layer is over the device layer, and includes a first dielectric material over the substrate. The first dielectric material has a first effective dielectric constant. A second dielectric material is over the device and adjacent the first dielectric material. The second dielectric material has a second effective dielectric constant less than the first effective dielectric constant.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Local interconnect layer with device within second dielectric material, and related methods
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T03%3A49%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Vanukuru,%20Venkata%20N.%20R&rft.date=2023-02-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11574863B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true