Method for manufacturing semiconductor structure and capable of controlling thicknesses of dielectric layers

Method for manufacturing semiconductor structure and capable of controlling thicknesses of dielectric layers

A method for manufacturing a semiconductor structure includes forming a first dielectric layer on a substrate; forming a second dielectric layer on the first dielectric layer; using a photomask to apply a photoresist to cover a first part of the second dielectric layer; removing a second part of the...

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1. Verfasser: Hsu, Te-Hsun
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Hsu, Te-Hsun
description A method for manufacturing a semiconductor structure includes forming a first dielectric layer on a substrate; forming a second dielectric layer on the first dielectric layer; using a photomask to apply a photoresist to cover a first part of the second dielectric layer; removing a second part of the second dielectric layer while retaining the first part of the second dielectric layer; and removing the photoresist. The first part of the second dielectric layer covers a first part of the first dielectric layer in a first area. The second part of the second dielectric layer covers a second part of the first dielectric layer in a second area. The first area is corresponding to a memory device. The second area is corresponding to a logic device.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for manufacturing semiconductor structure and capable of controlling thicknesses of dielectric layers
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