Quantum dot structure having a barrier region and a trap region, radiation conversion element and light-emitting device

Quantum dot structure having a barrier region and a trap region, radiation conversion element and light-emitting device

A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wh...

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Hauptverfasser: O'Brien, David, Treadway, Joseph
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator O'Brien, David
Treadway, Joseph
description A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.
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In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Quantum dot structure having a barrier region and a trap region, radiation conversion element and light-emitting device
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