Integrated circuits (IC's) with electro-migration (EM)-resistant segments in an interconnect level

Integrated circuit (IC) interconnect lines having improved electromigration resistance. Multi-patterning may be employed to define a first mask pattern. The first mask pattern may be backfilled and further patterned based on a second mask layer through a process-based selective occlusion of openings...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chandhok, Manish, Lin, Kevin, Jezewski, Christopher J
Format: Patent
Sprache:eng
Schlagworte:
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