Methods for manufacturing a MOSFET

A MOSFET includes a semiconductor body having a first side, a drift region, a body region forming a first pn-junction with the drift region, a source region forming a second pn-junction with the body region, in a vertical cross-section, a dielectric structure on the first side and having an upper si...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Pippan, Manfred, Stegemann, Maik, Jantscher, Wolfgang, Riegler, Andreas
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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