Semiconductor devices having asymmetrical structures

A semiconductor device includes a substrate including first and second active regions extending in a first direction and isolated from direct contact with each other in the first direction; a device isolation layer between the first and second active regions in the substrate; and first and second ga...

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Bibliographische Detailangaben
Hauptverfasser: Hur, Sunggi, You, Junggun, Jung, Joohee, Park, Sungil
Format: Patent
Sprache:eng
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