Method of manufacturing a semiconductor device and a semiconductor device

In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the substrate so that an upper portion of the fin structure is exposed from the isolation insulating layer....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hsieh, Jui Fu, Chen, Chih-Shan, Chen, Yi-Jen, Liao, Chih-Teng, Weng, Tzu-Chan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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