Memory devices and methods of manufacturing the same

A memory device may include a substrate; a first stack structure comprising a plurality of first gate layers and a plurality of first interlayer insulating layers alternately stacked on the substrate; a second stack structure comprising a plurality of second gate layers and a plurality of second int...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kang, Kiyoon, Cheon, Jisung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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