Method of forming semiconductor device having capped air gaps between buried bit lines and buried gate

A semiconductor device and method of forming the same, the semiconductor device includes plural bit lines, plural conductive patterns, plural conductive pads and a spacer. The bit lines are disposed on a substrate, along a first direction. The conductive patterns are disposed on the substrate, along...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Tsai, Tsung-Ying, Feng, Li-Wei, Liu, Tzu-Tsen, Ho, Chien-Ting, Wang, Ying-Chiao
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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