Transistors with backside field plate structures

Disclosed herein are IC structures that implement field plates for III-N transistors in a form of electrically conductive structures provided in a III-N semiconductor material below the polarization layer (i.e., at the "backside" of an IC structure). In some embodiments, such a field plate...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Then, Han Wui, Ramaswamy, Rahul, Rode, Johann Christian, Hafez, Walid M, Nidhi, Nidhi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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