Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

A technique capable of exhausting a process gas in a wide pressure range includes a substrate processing apparatus including: a process chamber; a gas supply system configured to supply a process gas containing a compound capable of reacting with a metal; and a gas exhaust system configured to exhau...

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Bibliographische Detailangaben
Hauptverfasser: Tateno, Hideto, Inada, Tetsuaki
Format: Patent
Sprache:eng
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