Three-dimensional semiconductor memory device

Disclosed is a three-dimensional semiconductor memory device comprising a substrate including a cell region and a connection region, a plurality of inter-electrode dielectric layers and a plurality of electrode layers alternately stacked on the substrate, wherein ends of the plurality of electrode l...

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Bibliographische Detailangaben
Hauptverfasser: Shim, Jae-Joo, Park, Kyungeun, Jang, Jaehoon, Lim, Jongkwang, Woo, Dongsung
Format: Patent
Sprache:eng
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