Semiconductor device and method of manufacturing the same

According to one embodiment, a semiconductor device includes a substrate, an interconnect layer, a layer stack, and a first silicon nitride layer. The interconnect layer includes a transistor provided on the substrate and a first interconnect electrically coupled to the transistor and is provided ab...

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Bibliographische Detailangaben
Hauptverfasser: Asada, Ryota, Nagashima, Hidenobu, Akou, Masayuki, Nakajima, Shingo
Format: Patent
Sprache:eng
Schlagworte:
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