Memory system and method of controlling memory system

A memory system includes a memory and a controller. The memory includes at least a first memory cell and a second memory cell. The controller can determine a first stress type that the first memory cell received or a second stress type that the second memory cell received based on a change amount be...

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Hauptverfasser:	Komatsu, Yuki, Shimada, Katsuyuki
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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creator	Komatsu, Yuki Shimada, Katsuyuki
description	A memory system includes a memory and a controller. The memory includes at least a first memory cell and a second memory cell. The controller can determine a first stress type that the first memory cell received or a second stress type that the second memory cell received based on a change amount between a first read threshold voltage to read data from the first memory cell when having received stress, and a second read threshold voltage to read data from the first memory cell when having received no stress.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11482287B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11482287B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11482287B23</originalsourceid><addsrcrecordid>eNrjZDD1Tc3NL6pUKK4sLknNVUjMS1HITS3JyE9RyE9TSM7PKynKz8nJzEsHiiKp42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8aHBhoYmFkZGFuZORsbEqAEAk70twg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Memory system and method of controlling memory system</title><source>esp@cenet</source><creator>Komatsu, Yuki ; Shimada, Katsuyuki</creator><creatorcontrib>Komatsu, Yuki ; Shimada, Katsuyuki</creatorcontrib><description>A memory system includes a memory and a controller. The memory includes at least a first memory cell and a second memory cell. The controller can determine a first stress type that the first memory cell received or a second stress type that the second memory cell received based on a change amount between a first read threshold voltage to read data from the first memory cell when having received stress, and a second read threshold voltage to read data from the first memory cell when having received no stress.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221025&DB=EPODOC&CC=US&NR=11482287B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221025&DB=EPODOC&CC=US&NR=11482287B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Komatsu, Yuki</creatorcontrib><creatorcontrib>Shimada, Katsuyuki</creatorcontrib><title>Memory system and method of controlling memory system</title><description>A memory system includes a memory and a controller. The memory includes at least a first memory cell and a second memory cell. The controller can determine a first stress type that the first memory cell received or a second stress type that the second memory cell received based on a change amount between a first read threshold voltage to read data from the first memory cell when having received stress, and a second read threshold voltage to read data from the first memory cell when having received no stress.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD1Tc3NL6pUKK4sLknNVUjMS1HITS3JyE9RyE9TSM7PKynKz8nJzEsHiiKp42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8aHBhoYmFkZGFuZORsbEqAEAk70twg</recordid><startdate>20221025</startdate><enddate>20221025</enddate><creator>Komatsu, Yuki</creator><creator>Shimada, Katsuyuki</creator><scope>EVB</scope></search><sort><creationdate>20221025</creationdate><title>Memory system and method of controlling memory system</title><author>Komatsu, Yuki ; Shimada, Katsuyuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11482287B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Komatsu, Yuki</creatorcontrib><creatorcontrib>Shimada, Katsuyuki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Komatsu, Yuki</au><au>Shimada, Katsuyuki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Memory system and method of controlling memory system</title><date>2022-10-25</date><risdate>2022</risdate><abstract>A memory system includes a memory and a controller. The memory includes at least a first memory cell and a second memory cell. The controller can determine a first stress type that the first memory cell received or a second stress type that the second memory cell received based on a change amount between a first read threshold voltage to read data from the first memory cell when having received stress, and a second read threshold voltage to read data from the first memory cell when having received no stress.</abstract><oa>free_for_read</oa></addata></record>
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subjects	INFORMATION STORAGE PHYSICS STATIC STORES
title	Memory system and method of controlling memory system
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T14%3A39%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Komatsu,%20Yuki&rft.date=2022-10-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11482287B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true