Clean isolation valve for reduced dead volume

Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Baluja, Sanjeev, Agarwal, Ashutosh
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Baluja, Sanjeev
Agarwal, Ashutosh
description Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of the second inlet line separates the first inlet line from the second inlet line preventing fluid communication between the first inlet line and the second inlet line.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11479857B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11479857B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11479857B23</originalsourceid><addsrcrecordid>eNrjZNB1zklNzFPILM7PSSzJzM9TKEvMKUtVSMsvUihKTSlNTk1RSElNTFEoy88pzU3lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGhibmlham5k5GxsSoAQC2ayo4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Clean isolation valve for reduced dead volume</title><source>esp@cenet</source><creator>Baluja, Sanjeev ; Agarwal, Ashutosh</creator><creatorcontrib>Baluja, Sanjeev ; Agarwal, Ashutosh</creatorcontrib><description>Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of the second inlet line separates the first inlet line from the second inlet line preventing fluid communication between the first inlet line and the second inlet line.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221025&amp;DB=EPODOC&amp;CC=US&amp;NR=11479857B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221025&amp;DB=EPODOC&amp;CC=US&amp;NR=11479857B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Baluja, Sanjeev</creatorcontrib><creatorcontrib>Agarwal, Ashutosh</creatorcontrib><title>Clean isolation valve for reduced dead volume</title><description>Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of the second inlet line separates the first inlet line from the second inlet line preventing fluid communication between the first inlet line and the second inlet line.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB1zklNzFPILM7PSSzJzM9TKEvMKUtVSMsvUihKTSlNTk1RSElNTFEoy88pzU3lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGhibmlham5k5GxsSoAQC2ayo4</recordid><startdate>20221025</startdate><enddate>20221025</enddate><creator>Baluja, Sanjeev</creator><creator>Agarwal, Ashutosh</creator><scope>EVB</scope></search><sort><creationdate>20221025</creationdate><title>Clean isolation valve for reduced dead volume</title><author>Baluja, Sanjeev ; Agarwal, Ashutosh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11479857B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Baluja, Sanjeev</creatorcontrib><creatorcontrib>Agarwal, Ashutosh</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Baluja, Sanjeev</au><au>Agarwal, Ashutosh</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Clean isolation valve for reduced dead volume</title><date>2022-10-25</date><risdate>2022</risdate><abstract>Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of the second inlet line separates the first inlet line from the second inlet line preventing fluid communication between the first inlet line and the second inlet line.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US11479857B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title Clean isolation valve for reduced dead volume
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T00%3A22%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Baluja,%20Sanjeev&rft.date=2022-10-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11479857B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true