Semiconductor arrangement with fin features having different heights

Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. An etch sequence is performed to form a first etched region over a planar region of a semiconductor arrangement. The first etched region exposes a planar structure, such as...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chiang, Tsung-Yu, Chao, Hsin-Lung, Chen, Kuang-Hsin, Chu-Hsuan, Chen
Format: Patent
Sprache:eng
Schlagworte:
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