Semiconductor structure and method for manufacturing same

Semiconductor structure and method for manufacturing same

The present disclosure provides a semiconductor structure and a method for manufacturing the same. The method at least includes: applying a first wet etching to remove a Ti metal seed layer to expose a dielectric layer; performing a first pretreatment on the dielectric layer; forming a first groove...

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Hauptverfasser: Zhou, Zuyuan, Wu, Chengtar, Lin, Chengchung, Yin, Jiashan
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Zhou, Zuyuan
Wu, Chengtar
Lin, Chengchung
Yin, Jiashan
description The present disclosure provides a semiconductor structure and a method for manufacturing the same. The method at least includes: applying a first wet etching to remove a Ti metal seed layer to expose a dielectric layer; performing a first pretreatment on the dielectric layer; forming a first groove in the dielectric layer to expose an interfacial Ti metal seed layer in the dielectric layer; applying a second wet etching to remove the interfacial Ti metal seed layer; and performing a second pretreatment on the dielectric layer to form a second groove with a depth greater than that of the interfacial Ti metal seed layer, which can effectively remove the interfacial Ti metal seed layer, and results in a depth difference between the bottom of the second groove and the interfacial Ti metal seed layer, thereby avoiding short circuits caused by the interfacial Ti metal seed layer, and improving device reliability.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor structure and method for manufacturing same
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