Training method of memory device and electronic device and electronic system including the same

An electronic device includes: a memory device; a nonvolatile memory configured to store a plurality of first configuration parameters respectively corresponding to operating voltages of the memory device and a plurality of second configuration parameters respectively corresponding to operating temp...

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Hauptverfasser: Kim, Jong Un, Lee, Ju Chan, Eun, Hyung Lae, Park, In Hoon, Kim, Dong, Park, Jang Seon
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creator Kim, Jong Un
Lee, Ju Chan
Eun, Hyung Lae
Park, In Hoon
Kim, Dong
Park, Jang Seon
description An electronic device includes: a memory device; a nonvolatile memory configured to store a plurality of first configuration parameters respectively corresponding to operating voltages of the memory device and a plurality of second configuration parameters respectively corresponding to operating temperatures of the memory device; and a memory controller configured to: determine a value of a third configuration parameter corresponding to an operating voltage of the memory device among the plurality of first configuration parameters stored in the nonvolatile memory without performing a training operation, determine a value of a fourth configuration parameter corresponding to an operating temperature of the memory device among the plurality of second configuration parameters stored in the nonvolatile memory without performing the training operation, and drive the memory device according to the determined values of the third and the fourth configuration parameters.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11461113B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11461113B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11461113B23</originalsourceid><addsrcrecordid>eNqNjEEKwjAQRbNxIeodxgN0ESseQFG6t65DSH5tIJmUTBR6exXcCq7-4_H4S2X6YgMHvlNCHbOnPLwp5TKTxzM4kGVPiHC1ZA7uh5VZKhIFdvHhP291BIlNWKvFYKNg892V2l7O_alrMGUDmawDo5rbVev9QWvdHnftP80LgPA9CA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Training method of memory device and electronic device and electronic system including the same</title><source>esp@cenet</source><creator>Kim, Jong Un ; Lee, Ju Chan ; Eun, Hyung Lae ; Park, In Hoon ; Kim, Dong ; Park, Jang Seon</creator><creatorcontrib>Kim, Jong Un ; Lee, Ju Chan ; Eun, Hyung Lae ; Park, In Hoon ; Kim, Dong ; Park, Jang Seon</creatorcontrib><description>An electronic device includes: a memory device; a nonvolatile memory configured to store a plurality of first configuration parameters respectively corresponding to operating voltages of the memory device and a plurality of second configuration parameters respectively corresponding to operating temperatures of the memory device; and a memory controller configured to: determine a value of a third configuration parameter corresponding to an operating voltage of the memory device among the plurality of first configuration parameters stored in the nonvolatile memory without performing a training operation, determine a value of a fourth configuration parameter corresponding to an operating temperature of the memory device among the plurality of second configuration parameters stored in the nonvolatile memory without performing the training operation, and drive the memory device according to the determined values of the third and the fourth configuration parameters.</description><language>eng</language><subject>CALCULATING ; COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; PHYSICS</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221004&amp;DB=EPODOC&amp;CC=US&amp;NR=11461113B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221004&amp;DB=EPODOC&amp;CC=US&amp;NR=11461113B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Jong Un</creatorcontrib><creatorcontrib>Lee, Ju Chan</creatorcontrib><creatorcontrib>Eun, Hyung Lae</creatorcontrib><creatorcontrib>Park, In Hoon</creatorcontrib><creatorcontrib>Kim, Dong</creatorcontrib><creatorcontrib>Park, Jang Seon</creatorcontrib><title>Training method of memory device and electronic device and electronic system including the same</title><description>An electronic device includes: a memory device; a nonvolatile memory configured to store a plurality of first configuration parameters respectively corresponding to operating voltages of the memory device and a plurality of second configuration parameters respectively corresponding to operating temperatures of the memory device; and a memory controller configured to: determine a value of a third configuration parameter corresponding to an operating voltage of the memory device among the plurality of first configuration parameters stored in the nonvolatile memory without performing a training operation, determine a value of a fourth configuration parameter corresponding to an operating temperature of the memory device among the plurality of second configuration parameters stored in the nonvolatile memory without performing the training operation, and drive the memory device according to the determined values of the third and the fourth configuration parameters.</description><subject>CALCULATING</subject><subject>COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEEKwjAQRbNxIeodxgN0ESseQFG6t65DSH5tIJmUTBR6exXcCq7-4_H4S2X6YgMHvlNCHbOnPLwp5TKTxzM4kGVPiHC1ZA7uh5VZKhIFdvHhP291BIlNWKvFYKNg892V2l7O_alrMGUDmawDo5rbVev9QWvdHnftP80LgPA9CA</recordid><startdate>20221004</startdate><enddate>20221004</enddate><creator>Kim, Jong Un</creator><creator>Lee, Ju Chan</creator><creator>Eun, Hyung Lae</creator><creator>Park, In Hoon</creator><creator>Kim, Dong</creator><creator>Park, Jang Seon</creator><scope>EVB</scope></search><sort><creationdate>20221004</creationdate><title>Training method of memory device and electronic device and electronic system including the same</title><author>Kim, Jong Un ; Lee, Ju Chan ; Eun, Hyung Lae ; Park, In Hoon ; Kim, Dong ; Park, Jang Seon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11461113B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>CALCULATING</topic><topic>COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Jong Un</creatorcontrib><creatorcontrib>Lee, Ju Chan</creatorcontrib><creatorcontrib>Eun, Hyung Lae</creatorcontrib><creatorcontrib>Park, In Hoon</creatorcontrib><creatorcontrib>Kim, Dong</creatorcontrib><creatorcontrib>Park, Jang Seon</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Jong Un</au><au>Lee, Ju Chan</au><au>Eun, Hyung Lae</au><au>Park, In Hoon</au><au>Kim, Dong</au><au>Park, Jang Seon</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Training method of memory device and electronic device and electronic system including the same</title><date>2022-10-04</date><risdate>2022</risdate><abstract>An electronic device includes: a memory device; a nonvolatile memory configured to store a plurality of first configuration parameters respectively corresponding to operating voltages of the memory device and a plurality of second configuration parameters respectively corresponding to operating temperatures of the memory device; and a memory controller configured to: determine a value of a third configuration parameter corresponding to an operating voltage of the memory device among the plurality of first configuration parameters stored in the nonvolatile memory without performing a training operation, determine a value of a fourth configuration parameter corresponding to an operating temperature of the memory device among the plurality of second configuration parameters stored in the nonvolatile memory without performing the training operation, and drive the memory device according to the determined values of the third and the fourth configuration parameters.</abstract><oa>free_for_read</oa></addata></record>
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subjects CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
title Training method of memory device and electronic device and electronic system including the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T08%3A19%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim,%20Jong%20Un&rft.date=2022-10-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11461113B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true