Composition for resist underlayer film formation, resist underlayer film and forming method thereof, patterned substrate-producing method, and compound

A composition for resist underlayer film formation, includes a compound represented by formula (1) and a solvent. Ar1 represents an aromatic heterocyclic group having a valency of m and having 5 to 20 ring atoms; m is an integer of 1 to 11; Ar2 is a group bonding to a carbon atom of the aromatic het...

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Bibliographische Detailangaben
Hauptverfasser: Nakagawa, Hiroki, Matsumura, Yuushi, Takanashi, Kazunori, Nosaka, Naoya, Nakatsu, Hiroki
Format: Patent
Sprache:eng
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