Narrow band emitting SiAlON phosphor
This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1...
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creator | Weiler, Volker Strobel, Philipp-Jean Schmidt, Peter Josef Tücks, Andreas |
description | This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1−xLi3−2yAl1+2y−zSizO4−4y−zN4y+z:EUx(AE=Ca, Sr, Ba; 0 |
format | Patent |
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The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1−xLi3−2yAl1+2y−zSizO4−4y−zN4y+z:EUx(AE=Ca, Sr, Ba; 0<x<0.04, 0≤y<1, 0<z<0.05, y+z≤1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.</description><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS THEREOF ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INORGANIC CHEMISTRY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; NON-METALLIC ELEMENTS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220927&DB=EPODOC&CC=US&NR=11453821B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220927&DB=EPODOC&CC=US&NR=11453821B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Weiler, Volker</creatorcontrib><creatorcontrib>Strobel, Philipp-Jean</creatorcontrib><creatorcontrib>Schmidt, Peter Josef</creatorcontrib><creatorcontrib>Tücks, Andreas</creatorcontrib><title>Narrow band emitting SiAlON phosphor</title><description>This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1−xLi3−2yAl1+2y−zSizO4−4y−zN4y+z:EUx(AE=Ca, Sr, Ba; 0<x<0.04, 0≤y<1, 0<z<0.05, y+z≤1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INORGANIC CHEMISTRY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDxSywqyi9XSErMS1FIzc0sKcnMS1cIznTM8fdTKMjILwbiIh4G1rTEnOJUXijNzaDo5hri7KGbWpAfn1pckJicmpdaEh8abGhoYmpsYWToZGRMjBoA8IYmmQ</recordid><startdate>20220927</startdate><enddate>20220927</enddate><creator>Weiler, Volker</creator><creator>Strobel, Philipp-Jean</creator><creator>Schmidt, Peter Josef</creator><creator>Tücks, Andreas</creator><scope>EVB</scope></search><sort><creationdate>20220927</creationdate><title>Narrow band emitting SiAlON phosphor</title><author>Weiler, Volker ; Strobel, Philipp-Jean ; Schmidt, Peter Josef ; Tücks, Andreas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11453821B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Weiler, Volker</creatorcontrib><creatorcontrib>Strobel, Philipp-Jean</creatorcontrib><creatorcontrib>Schmidt, Peter Josef</creatorcontrib><creatorcontrib>Tücks, Andreas</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Weiler, Volker</au><au>Strobel, Philipp-Jean</au><au>Schmidt, Peter Josef</au><au>Tücks, Andreas</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Narrow band emitting SiAlON phosphor</title><date>2022-09-27</date><risdate>2022</risdate><abstract>This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1−xLi3−2yAl1+2y−zSizO4−4y−zN4y+z:EUx(AE=Ca, Sr, Ba; 0<x<0.04, 0≤y<1, 0<z<0.05, y+z≤1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS PAINTS POLISHES SEMICONDUCTOR DEVICES |
title | Narrow band emitting SiAlON phosphor |
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