Ultra-deep compute static random access memory with high compute throughput and multi-directional data propagation

An ultra-deep compute Static Random Access Memory (SRAM) with high compute throughput and multi-directional data transfer capability is provided. Compute units are placed in both horizontal and vertical directions to achieve a symmetric layout while enabling communication between the compute units....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Augustine, Charles, Koren, Chen, Paul, Somnath, Khellah, Muhammad M
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Augustine, Charles
Koren, Chen
Paul, Somnath
Khellah, Muhammad M
description An ultra-deep compute Static Random Access Memory (SRAM) with high compute throughput and multi-directional data transfer capability is provided. Compute units are placed in both horizontal and vertical directions to achieve a symmetric layout while enabling communication between the compute units. An SRAM array supports simultaneous read and write to the left and right section of the same SRAM subarray by duplicating pre-decoding logic inside the SRAM array. This allows applications with non-overlapping read and write address spaces to have twice the bandwidth as compared to a baseline SRAM array.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11450672B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11450672B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11450672B23</originalsourceid><addsrcrecordid>eNqNi0EKwjAQRbtxIeodxgMUbNW6VxT32nUZkrEJJJ0wmSLe3gri2tV_PN6fF9IGFSwtUQLDMY1KkBXVGxAcLEdAYyhniBRZXvD06sD53v1qdcJj7yaG6QBxDOpL64WMeh4wgEVFSMIJe_yoZTF7YMi0-u6iWF_O99O1pMQd5YSGBtKuvVXVbr9pDvWx3v7TvAFX4EUP</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Ultra-deep compute static random access memory with high compute throughput and multi-directional data propagation</title><source>esp@cenet</source><creator>Augustine, Charles ; Koren, Chen ; Paul, Somnath ; Khellah, Muhammad M</creator><creatorcontrib>Augustine, Charles ; Koren, Chen ; Paul, Somnath ; Khellah, Muhammad M</creatorcontrib><description>An ultra-deep compute Static Random Access Memory (SRAM) with high compute throughput and multi-directional data transfer capability is provided. Compute units are placed in both horizontal and vertical directions to achieve a symmetric layout while enabling communication between the compute units. An SRAM array supports simultaneous read and write to the left and right section of the same SRAM subarray by duplicating pre-decoding logic inside the SRAM array. This allows applications with non-overlapping read and write address spaces to have twice the bandwidth as compared to a baseline SRAM array.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220920&amp;DB=EPODOC&amp;CC=US&amp;NR=11450672B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220920&amp;DB=EPODOC&amp;CC=US&amp;NR=11450672B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Augustine, Charles</creatorcontrib><creatorcontrib>Koren, Chen</creatorcontrib><creatorcontrib>Paul, Somnath</creatorcontrib><creatorcontrib>Khellah, Muhammad M</creatorcontrib><title>Ultra-deep compute static random access memory with high compute throughput and multi-directional data propagation</title><description>An ultra-deep compute Static Random Access Memory (SRAM) with high compute throughput and multi-directional data transfer capability is provided. Compute units are placed in both horizontal and vertical directions to achieve a symmetric layout while enabling communication between the compute units. An SRAM array supports simultaneous read and write to the left and right section of the same SRAM subarray by duplicating pre-decoding logic inside the SRAM array. This allows applications with non-overlapping read and write address spaces to have twice the bandwidth as compared to a baseline SRAM array.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi0EKwjAQRbtxIeodxgMUbNW6VxT32nUZkrEJJJ0wmSLe3gri2tV_PN6fF9IGFSwtUQLDMY1KkBXVGxAcLEdAYyhniBRZXvD06sD53v1qdcJj7yaG6QBxDOpL64WMeh4wgEVFSMIJe_yoZTF7YMi0-u6iWF_O99O1pMQd5YSGBtKuvVXVbr9pDvWx3v7TvAFX4EUP</recordid><startdate>20220920</startdate><enddate>20220920</enddate><creator>Augustine, Charles</creator><creator>Koren, Chen</creator><creator>Paul, Somnath</creator><creator>Khellah, Muhammad M</creator><scope>EVB</scope></search><sort><creationdate>20220920</creationdate><title>Ultra-deep compute static random access memory with high compute throughput and multi-directional data propagation</title><author>Augustine, Charles ; Koren, Chen ; Paul, Somnath ; Khellah, Muhammad M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11450672B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Augustine, Charles</creatorcontrib><creatorcontrib>Koren, Chen</creatorcontrib><creatorcontrib>Paul, Somnath</creatorcontrib><creatorcontrib>Khellah, Muhammad M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Augustine, Charles</au><au>Koren, Chen</au><au>Paul, Somnath</au><au>Khellah, Muhammad M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ultra-deep compute static random access memory with high compute throughput and multi-directional data propagation</title><date>2022-09-20</date><risdate>2022</risdate><abstract>An ultra-deep compute Static Random Access Memory (SRAM) with high compute throughput and multi-directional data transfer capability is provided. Compute units are placed in both horizontal and vertical directions to achieve a symmetric layout while enabling communication between the compute units. An SRAM array supports simultaneous read and write to the left and right section of the same SRAM subarray by duplicating pre-decoding logic inside the SRAM array. This allows applications with non-overlapping read and write address spaces to have twice the bandwidth as compared to a baseline SRAM array.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US11450672B2
source esp@cenet
subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Ultra-deep compute static random access memory with high compute throughput and multi-directional data propagation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T17%3A51%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Augustine,%20Charles&rft.date=2022-09-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11450672B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true