Subtractively patterned interconnect structures for integrated circuits

IC interconnect structures including subtractively patterned features. Feature ends may be defined through multiple patterning of multiple cap materials for reduced misregistration. Subtractively patterned features may be lines integrated with damascene vias or with subtractively patterned vias, or...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kabir, Nafees, Chandhok, Manish, Jezewski, Christopher, Reshotko, Miriam, Tronic, Tristan, Christenson, Michael, Blackwell, James M, Lin, Kevin, Chen, Jiun-Ruey, Yoo, Hui Jae, Bielefeld, Jeffery, Chebiam, Ramanan, Metz, Matthew, Karpov, Elijah, Naylor, Carl, Sato, Noriyuki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!