Bulk acoustic resonator and filter device
A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Kim, Yong Suk Lee, Moon Chul Yoon, Sang Kee Lee, Tae Hun Lim, Chang Hyun |
description | A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11437975B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11437975B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11437975B23</originalsourceid><addsrcrecordid>eNrjZNB0Ks3JVkhMzi8tLslMVihKLc7PSyzJL1JIzEtRSMvMKUktUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGJsbmluamTkbGxKgBAAO8KN0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Bulk acoustic resonator and filter device</title><source>esp@cenet</source><creator>Kim, Yong Suk ; Lee, Moon Chul ; Yoon, Sang Kee ; Lee, Tae Hun ; Lim, Chang Hyun</creator><creatorcontrib>Kim, Yong Suk ; Lee, Moon Chul ; Yoon, Sang Kee ; Lee, Tae Hun ; Lim, Chang Hyun</creatorcontrib><description>A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.</description><language>eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220906&DB=EPODOC&CC=US&NR=11437975B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220906&DB=EPODOC&CC=US&NR=11437975B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Yong Suk</creatorcontrib><creatorcontrib>Lee, Moon Chul</creatorcontrib><creatorcontrib>Yoon, Sang Kee</creatorcontrib><creatorcontrib>Lee, Tae Hun</creatorcontrib><creatorcontrib>Lim, Chang Hyun</creatorcontrib><title>Bulk acoustic resonator and filter device</title><description>A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB0Ks3JVkhMzi8tLslMVihKLc7PSyzJL1JIzEtRSMvMKUktUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGJsbmluamTkbGxKgBAAO8KN0</recordid><startdate>20220906</startdate><enddate>20220906</enddate><creator>Kim, Yong Suk</creator><creator>Lee, Moon Chul</creator><creator>Yoon, Sang Kee</creator><creator>Lee, Tae Hun</creator><creator>Lim, Chang Hyun</creator><scope>EVB</scope></search><sort><creationdate>20220906</creationdate><title>Bulk acoustic resonator and filter device</title><author>Kim, Yong Suk ; Lee, Moon Chul ; Yoon, Sang Kee ; Lee, Tae Hun ; Lim, Chang Hyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11437975B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Yong Suk</creatorcontrib><creatorcontrib>Lee, Moon Chul</creatorcontrib><creatorcontrib>Yoon, Sang Kee</creatorcontrib><creatorcontrib>Lee, Tae Hun</creatorcontrib><creatorcontrib>Lim, Chang Hyun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Yong Suk</au><au>Lee, Moon Chul</au><au>Yoon, Sang Kee</au><au>Lee, Tae Hun</au><au>Lim, Chang Hyun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Bulk acoustic resonator and filter device</title><date>2022-09-06</date><risdate>2022</risdate><abstract>A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US11437975B2 |
source | esp@cenet |
subjects | BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS |
title | Bulk acoustic resonator and filter device |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T16%3A42%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim,%20Yong%20Suk&rft.date=2022-09-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11437975B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |