Doped gate dielectrics materials

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed b...

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Bibliographische Detailangaben
Hauptverfasser: Chu, Rongming, Li, Zijian Ray, Cao, Yu
Format: Patent
Sprache:eng
Schlagworte:
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