Semiconductor device and method for manufacturing semiconductor device

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes an insulating layer provided on a first impurity layer and a second impurity layer on a termination region side, a metallized layer provided on the first impurity layer and the second impurity layer exposed from the insulating layer and on the insulating layer, and an...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Takaki, Yasushi, Taguchi, Kensuke, Matsuno, Yoshinori, Miyazaki, Kosuke
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes an insulating layer provided on a first impurity layer and a second impurity layer on a termination region side, a metallized layer provided on the first impurity layer and the second impurity layer exposed from the insulating layer and on the insulating layer, and an electrode provided on the metallized layer. A position of a first end of the metallized layer on the termination region side and a position of a second end of the electrode on the termination region side are the same in plan view.