Method for fabricating dynamic random access memory devices

The present disclosure provides a method for fabricating DRAM devices with cylinder-type stacked capacitors. By utilizing offsetting of a first lattice pattern on a second silicon nitride layer (i.e., a middle silicon nitride layer) and a second lattice pattern on a third silicon nitride layer (i.e....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wang, Mao-Ying, Lin, Yu-Ting
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!