Method for forming semiconductor device

A method of forming a semiconductor device includes forming a gate structure over first and second fins over a substrate; forming an interlayer dielectric layer surrounding first and second fins; etching a first trench in the interlayer dielectric layer between the first and second fins uncovered by...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lin, Ya-Hsiu, Wen, Ming-Chang, Wu, Bone-Fong, Chang, Chang-Yun
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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