Silicon-containing layer-forming composition, and method for producing pattern-equipped substrate which uses same
Provided is a silicon-containing layer forming composition for forming a silicon-containing layer which exhibits an anti-reflective function during exposure in a multilayer resist process and, during dry etching, shows a high etching rate against a plasma of fluorine-based gas and a low etching rate...
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| creator | Nakatsuji, Junya Yamanaka, Kazuhiro |
| description | Provided is a silicon-containing layer forming composition for forming a silicon-containing layer which exhibits an anti-reflective function during exposure in a multilayer resist process and, during dry etching, shows a high etching rate against a plasma of fluorine-based gas and a low etching rate against a plasma of oxygen-based gas. The silicon-containing layer forming composition includes a polysiloxane compound having a structural unit of the formula and a solvent. [(R1)bR2mSiOn/2] In the formula, R1 is a group represented by the following formula:(where a is an integer of 1 to 5; and a wavy line means that a line which the wavy line intersects is a bond); R2 is each independently a hydrogen atom, a C1-C3 alkyl group, a phenyl group, a hydroxy group, a C1-C3 alkoxy group or a C1-C3 fluoroalkyl group; b is an integer of 1 to 3; m is an integer of 0 to 2; n is an integer of 1 to 3; and a relationship of b+m+n=4 is satisfied). |
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The silicon-containing layer forming composition includes a polysiloxane compound having a structural unit of the formula and a solvent. [(R1)bR2mSiOn/2] In the formula, R1 is a group represented by the following formula:(where a is an integer of 1 to 5; and a wavy line means that a line which the wavy line intersects is a bond); R2 is each independently a hydrogen atom, a C1-C3 alkyl group, a phenyl group, a hydroxy group, a C1-C3 alkoxy group or a C1-C3 fluoroalkyl group; b is an integer of 1 to 3; m is an integer of 0 to 2; n is an integer of 1 to 3; and a relationship of b+m+n=4 is satisfied).</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220906&DB=EPODOC&CC=US&NR=11437237B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220906&DB=EPODOC&CC=US&NR=11437237B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nakatsuji, Junya</creatorcontrib><creatorcontrib>Yamanaka, Kazuhiro</creatorcontrib><title>Silicon-containing layer-forming composition, and method for producing pattern-equipped substrate which uses same</title><description>Provided is a silicon-containing layer forming composition for forming a silicon-containing layer which exhibits an anti-reflective function during exposure in a multilayer resist process and, during dry etching, shows a high etching rate against a plasma of fluorine-based gas and a low etching rate against a plasma of oxygen-based gas. The silicon-containing layer forming composition includes a polysiloxane compound having a structural unit of the formula and a solvent. [(R1)bR2mSiOn/2] In the formula, R1 is a group represented by the following formula:(where a is an integer of 1 to 5; and a wavy line means that a line which the wavy line intersects is a bond); R2 is each independently a hydrogen atom, a C1-C3 alkyl group, a phenyl group, a hydroxy group, a C1-C3 alkoxy group or a C1-C3 fluoroalkyl group; b is an integer of 1 to 3; m is an integer of 0 to 2; n is an integer of 1 to 3; and a relationship of b+m+n=4 is satisfied).</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNikEKwjAQRbtxIeodxr1ZtBW6VxT31XUZk6kNNJk0kyDe3hY8gIvH5_HfuphaO1rNXs0ktN76F4z4oah6jm4xzS6w2GTZHwC9AUdpYAPzDyGyyXqpAqZE0Suasg2BDEh-SoqYCN6D1QNkIQFBR9ti1eMotPvtpthfL_fzTVHgjiSgJk-pe7Rleaybqm5OVf1P8wUygUTM</recordid><startdate>20220906</startdate><enddate>20220906</enddate><creator>Nakatsuji, Junya</creator><creator>Yamanaka, Kazuhiro</creator><scope>EVB</scope></search><sort><creationdate>20220906</creationdate><title>Silicon-containing layer-forming composition, and method for producing pattern-equipped substrate which uses same</title><author>Nakatsuji, Junya ; Yamanaka, Kazuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11437237B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>Nakatsuji, Junya</creatorcontrib><creatorcontrib>Yamanaka, Kazuhiro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nakatsuji, Junya</au><au>Yamanaka, Kazuhiro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Silicon-containing layer-forming composition, and method for producing pattern-equipped substrate which uses same</title><date>2022-09-06</date><risdate>2022</risdate><abstract>Provided is a silicon-containing layer forming composition for forming a silicon-containing layer which exhibits an anti-reflective function during exposure in a multilayer resist process and, during dry etching, shows a high etching rate against a plasma of fluorine-based gas and a low etching rate against a plasma of oxygen-based gas. The silicon-containing layer forming composition includes a polysiloxane compound having a structural unit of the formula and a solvent. [(R1)bR2mSiOn/2] In the formula, R1 is a group represented by the following formula:(where a is an integer of 1 to 5; and a wavy line means that a line which the wavy line intersects is a bond); R2 is each independently a hydrogen atom, a C1-C3 alkyl group, a phenyl group, a hydroxy group, a C1-C3 alkoxy group or a C1-C3 fluoroalkyl group; b is an integer of 1 to 3; m is an integer of 0 to 2; n is an integer of 1 to 3; and a relationship of b+m+n=4 is satisfied).</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP |
| title | Silicon-containing layer-forming composition, and method for producing pattern-equipped substrate which uses same |
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