Array of cross point memory cells

A method of forming an array of memory cells comprises forming an elevationally inner tier of memory cells comprising spaced inner tier lower first conductive lines, spaced inner tier upper second conductive lines, and programmable material of individual inner tier memory cells elevationally between...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Frost, Denzil S, Allen, III, Tuman Earl
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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