Determination of defect location for examination of a specimen

There is provided a method and a system configured to obtain an image of a one or more first areas of a semiconductor specimen acquired by an examination tool, determine data Datt informative of defectivity in the one or more first areas, determine one or more second areas of the semiconductor speci...

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Hauptverfasser:	Ben Ami, Rafael, Cohen, Boaz, Girmonsky, Doron, Shemesh, Dror
Format:	Patent
Sprache:	eng
Schlagworte:	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING IMAGE DATA PROCESSING OR GENERATION, IN GENERAL PHYSICS
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creator	Ben Ami, Rafael Cohen, Boaz Girmonsky, Doron Shemesh, Dror
description	There is provided a method and a system configured to obtain an image of a one or more first areas of a semiconductor specimen acquired by an examination tool, determine data Datt informative of defectivity in the one or more first areas, determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected based at least on an evolution of Datt, or of data correlated to Datt, in the one or more first areas, and select the one or more second areas for inspection by the examination tool.
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subjects	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING IMAGE DATA PROCESSING OR GENERATION, IN GENERAL PHYSICS
title	Determination of defect location for examination of a specimen
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