Solid-state image sensor and electronic apparatus

This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a...

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Hauptverfasser: Matsumoto, Akira, Tayanaka, Hiroshi
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creator Matsumoto, Akira
Tayanaka, Hiroshi
description This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a first substrate and a second substrate stacked one on top of the other and a first organic photoelectric conversion film formed on the first substrate and that a latch circuit is formed on the second substrate. This technology may be applied to back-illuminated CISs, for example.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11404483B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11404483B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11404483B23</originalsourceid><addsrcrecordid>eNrjZDAMzs_JTNEtLkksSVXIzE1MT1UoTs0rzi9SSMxLUUjNSU0uKcrPy0xWSCwoSCxKLCkt5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8aHBhoYmBiYmFsZORsbEqAEAoG0r8A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Solid-state image sensor and electronic apparatus</title><source>esp@cenet</source><creator>Matsumoto, Akira ; Tayanaka, Hiroshi</creator><creatorcontrib>Matsumoto, Akira ; Tayanaka, Hiroshi</creatorcontrib><description>This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a first substrate and a second substrate stacked one on top of the other and a first organic photoelectric conversion film formed on the first substrate and that a latch circuit is formed on the second substrate. This technology may be applied to back-illuminated CISs, for example.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PICTORIAL COMMUNICATION, e.g. TELEVISION ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220802&amp;DB=EPODOC&amp;CC=US&amp;NR=11404483B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220802&amp;DB=EPODOC&amp;CC=US&amp;NR=11404483B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Matsumoto, Akira</creatorcontrib><creatorcontrib>Tayanaka, Hiroshi</creatorcontrib><title>Solid-state image sensor and electronic apparatus</title><description>This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a first substrate and a second substrate stacked one on top of the other and a first organic photoelectric conversion film formed on the first substrate and that a latch circuit is formed on the second substrate. This technology may be applied to back-illuminated CISs, for example.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PICTORIAL COMMUNICATION, e.g. TELEVISION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMzs_JTNEtLkksSVXIzE1MT1UoTs0rzi9SSMxLUUjNSU0uKcrPy0xWSCwoSCxKLCkt5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8aHBhoYmBiYmFsZORsbEqAEAoG0r8A</recordid><startdate>20220802</startdate><enddate>20220802</enddate><creator>Matsumoto, Akira</creator><creator>Tayanaka, Hiroshi</creator><scope>EVB</scope></search><sort><creationdate>20220802</creationdate><title>Solid-state image sensor and electronic apparatus</title><author>Matsumoto, Akira ; Tayanaka, Hiroshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11404483B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PICTORIAL COMMUNICATION, e.g. TELEVISION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Matsumoto, Akira</creatorcontrib><creatorcontrib>Tayanaka, Hiroshi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Matsumoto, Akira</au><au>Tayanaka, Hiroshi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Solid-state image sensor and electronic apparatus</title><date>2022-08-02</date><risdate>2022</risdate><abstract>This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a first substrate and a second substrate stacked one on top of the other and a first organic photoelectric conversion film formed on the first substrate and that a latch circuit is formed on the second substrate. This technology may be applied to back-illuminated CISs, for example.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
title Solid-state image sensor and electronic apparatus
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T06%3A51%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Matsumoto,%20Akira&rft.date=2022-08-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11404483B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true