Semiconductor structure formation

Semiconductor structure formation

Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded...

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Hauptverfasser: Zhuang, Kent H, Good, Farrell M, Jebaraj Johnley Muthuraj, Josiah, Greenwood, Benjamin E, Imonigie, Jerome A, Sarkar, Santanu, Fucsko, Janos
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Zhuang, Kent H
Good, Farrell M
Jebaraj Johnley Muthuraj, Josiah
Greenwood, Benjamin E
Imonigie, Jerome A
Sarkar, Santanu
Fucsko, Janos
description Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11404267B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11404267B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11404267B23</originalsourceid><addsrcrecordid>eNrjZFAMTs3NTM7PSylNLskvUiguKQIySotSFdLyi3ITSzLz83gYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGhiYGJkZm5k5ExMWoA11kmjQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor structure formation</title><source>esp@cenet</source><creator>Zhuang, Kent H ; Good, Farrell M ; Jebaraj Johnley Muthuraj, Josiah ; Greenwood, Benjamin E ; Imonigie, Jerome A ; Sarkar, Santanu ; Fucsko, Janos</creator><creatorcontrib>Zhuang, Kent H ; Good, Farrell M ; Jebaraj Johnley Muthuraj, Josiah ; Greenwood, Benjamin E ; Imonigie, Jerome A ; Sarkar, Santanu ; Fucsko, Janos</creatorcontrib><description>Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220802&amp;DB=EPODOC&amp;CC=US&amp;NR=11404267B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220802&amp;DB=EPODOC&amp;CC=US&amp;NR=11404267B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Zhuang, Kent H</creatorcontrib><creatorcontrib>Good, Farrell M</creatorcontrib><creatorcontrib>Jebaraj Johnley Muthuraj, Josiah</creatorcontrib><creatorcontrib>Greenwood, Benjamin E</creatorcontrib><creatorcontrib>Imonigie, Jerome A</creatorcontrib><creatorcontrib>Sarkar, Santanu</creatorcontrib><creatorcontrib>Fucsko, Janos</creatorcontrib><title>Semiconductor structure formation</title><description>Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAMTs3NTM7PSylNLskvUiguKQIySotSFdLyi3ITSzLz83gYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGhiYGJkZm5k5ExMWoA11kmjQ</recordid><startdate>20220802</startdate><enddate>20220802</enddate><creator>Zhuang, Kent H</creator><creator>Good, Farrell M</creator><creator>Jebaraj Johnley Muthuraj, Josiah</creator><creator>Greenwood, Benjamin E</creator><creator>Imonigie, Jerome A</creator><creator>Sarkar, Santanu</creator><creator>Fucsko, Janos</creator><scope>EVB</scope></search><sort><creationdate>20220802</creationdate><title>Semiconductor structure formation</title><author>Zhuang, Kent H ; Good, Farrell M ; Jebaraj Johnley Muthuraj, Josiah ; Greenwood, Benjamin E ; Imonigie, Jerome A ; Sarkar, Santanu ; Fucsko, Janos</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11404267B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhuang, Kent H</creatorcontrib><creatorcontrib>Good, Farrell M</creatorcontrib><creatorcontrib>Jebaraj Johnley Muthuraj, Josiah</creatorcontrib><creatorcontrib>Greenwood, Benjamin E</creatorcontrib><creatorcontrib>Imonigie, Jerome A</creatorcontrib><creatorcontrib>Sarkar, Santanu</creatorcontrib><creatorcontrib>Fucsko, Janos</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhuang, Kent H</au><au>Good, Farrell M</au><au>Jebaraj Johnley Muthuraj, Josiah</au><au>Greenwood, Benjamin E</au><au>Imonigie, Jerome A</au><au>Sarkar, Santanu</au><au>Fucsko, Janos</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor structure formation</title><date>2022-08-02</date><risdate>2022</risdate><abstract>Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor structure formation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T04%3A43%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Zhuang,%20Kent%20H&rft.date=2022-08-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11404267B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true