Memory device

A memory device includes a first ferromagnetic layer, an insulating layer above the first ferromagnetic layer, a second ferromagnetic layer above the insulating layer, a capping layer on an upper surface of the second ferromagnetic layer, and an electrode on an upper surface of the capping layer. Th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jung, Jin Won, Sawada, Kazuya, Kitagawa, Eiji, Oikawa, Tadaaki, Eeh, Young Min, Isoda, Taiga
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS STATIC STORES TESTING
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