Back-side illuminated image sensor

Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Guyader, Francois, Lalanne, Frederic, Fonteneau, Pascal, Seignard, Aurelien, Henrion, Yann, Gay, Laurent
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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