Three-dimensional memory device including through-memory-level via structures and methods of making the same

A three-dimensional memory device can include at least one alternating stack of insulating layers and electrically conductive layers located over a semiconductor material layer, memory stack structures vertically extending through the at least one alternating stack, and a vertical stack of dielectri...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Iwai, Takaaki, Otsu, Yoshitaka, Tokita, Hirofumi
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!