Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric

Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric

Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, gr...

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Hauptverfasser: Tomita, Yoshihiro, Nair, Vijay K, Falcon, Javier A, Dogiamis, Georgios C, Kamgaing, Telesphor
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Tomita, Yoshihiro
Nair, Vijay K
Falcon, Javier A
Dogiamis, Georgios C
Kamgaing, Telesphor
description Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, group III-V substrate). An antenna unit is coupled to the second die. The antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11387200B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11387200B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11387200B23</originalsourceid><addsrcrecordid>eNqNzDsOwjAQBNA0FAi4w3IApCQUUINANFRAHZn1JlkRe4M_QVyAc2MkRE01xbyZcfY6MjqhjjA4sYygaWAkDw8OLbTctFA7ukey-AQUY2JCKrBYMKJjl2SrBrbNp-wlWg2eDKNYHTGI-_2xDdQ4FUhD2iroFd5UQ1Crq2OcZqNadZ5m35xk8_3uvD0sqJeKfMJkKVSXU1Es16syzzfl8h_zBh1fTOs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric</title><source>esp@cenet</source><creator>Tomita, Yoshihiro ; Nair, Vijay K ; Falcon, Javier A ; Dogiamis, Georgios C ; Kamgaing, Telesphor</creator><creatorcontrib>Tomita, Yoshihiro ; Nair, Vijay K ; Falcon, Javier A ; Dogiamis, Georgios C ; Kamgaing, Telesphor</creatorcontrib><description>Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, group III-V substrate). An antenna unit is coupled to the second die. The antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220712&amp;DB=EPODOC&amp;CC=US&amp;NR=11387200B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220712&amp;DB=EPODOC&amp;CC=US&amp;NR=11387200B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tomita, Yoshihiro</creatorcontrib><creatorcontrib>Nair, Vijay K</creatorcontrib><creatorcontrib>Falcon, Javier A</creatorcontrib><creatorcontrib>Dogiamis, Georgios C</creatorcontrib><creatorcontrib>Kamgaing, Telesphor</creatorcontrib><title>Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric</title><description>Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, group III-V substrate). An antenna unit is coupled to the second die. The antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzDsOwjAQBNA0FAi4w3IApCQUUINANFRAHZn1JlkRe4M_QVyAc2MkRE01xbyZcfY6MjqhjjA4sYygaWAkDw8OLbTctFA7ukey-AQUY2JCKrBYMKJjl2SrBrbNp-wlWg2eDKNYHTGI-_2xDdQ4FUhD2iroFd5UQ1Crq2OcZqNadZ5m35xk8_3uvD0sqJeKfMJkKVSXU1Es16syzzfl8h_zBh1fTOs</recordid><startdate>20220712</startdate><enddate>20220712</enddate><creator>Tomita, Yoshihiro</creator><creator>Nair, Vijay K</creator><creator>Falcon, Javier A</creator><creator>Dogiamis, Georgios C</creator><creator>Kamgaing, Telesphor</creator><scope>EVB</scope></search><sort><creationdate>20220712</creationdate><title>Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric</title><author>Tomita, Yoshihiro ; Nair, Vijay K ; Falcon, Javier A ; Dogiamis, Georgios C ; Kamgaing, Telesphor</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11387200B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Tomita, Yoshihiro</creatorcontrib><creatorcontrib>Nair, Vijay K</creatorcontrib><creatorcontrib>Falcon, Javier A</creatorcontrib><creatorcontrib>Dogiamis, Georgios C</creatorcontrib><creatorcontrib>Kamgaing, Telesphor</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tomita, Yoshihiro</au><au>Nair, Vijay K</au><au>Falcon, Javier A</au><au>Dogiamis, Georgios C</au><au>Kamgaing, Telesphor</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric</title><date>2022-07-12</date><risdate>2022</risdate><abstract>Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, group III-V substrate). An antenna unit is coupled to the second die. The antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T20%3A39%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Tomita,%20Yoshihiro&rft.date=2022-07-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11387200B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true