Power amplification device

A power amplification device includes: a first semiconductor chip including a first main surface and a second main surface; a first field-effect transistor, a first drain finger part, a plurality of first gate finger parts, and a source finger part; a sub-mount substrate including a third main surfa...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kamitani, Masatoshi, Ohhashi, Kazuhiko, Yamamoto, Kouki
Format: Patent
Sprache:eng
Schlagworte:
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