Method for erasing a ReRAM memory cell

A method for erasing a ReRAM memory cell that includes a ReRAM device having a select circuit with two series-connected select transistors. The method includes determining if the ReRAM cell is selected for erasing. If the ReRAM cell is selected for erasing, the bit line node is biased at a first vol...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Nguyen, Victor, Dhaoui, Fethi, McCollum, John L, Xue, Fengliang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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