Method for erasing a ReRAM memory cell

Method for erasing a ReRAM memory cell

A method for erasing a ReRAM memory cell that includes a ReRAM device having a select circuit with two series-connected select transistors. The method includes determining if the ReRAM cell is selected for erasing. If the ReRAM cell is selected for erasing, the bit line node is biased at a first vol...

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Hauptverfasser: Nguyen, Victor, Dhaoui, Fethi, McCollum, John L, Xue, Fengliang
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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creator Nguyen, Victor
Dhaoui, Fethi
McCollum, John L
Xue, Fengliang
description A method for erasing a ReRAM memory cell that includes a ReRAM device having a select circuit with two series-connected select transistors. The method includes determining if the ReRAM cell is selected for erasing. If the ReRAM cell is selected for erasing, the bit line node is biased at a first voltage potential, the source line node is biased at a second voltage potential greater than the first voltage potential and the gates of the series-connected select transistors are supplied with positive voltage pulses. The difference between the first voltage potential and the second voltage potential is sufficient to erase the ReRAM device in the ReRAM cell. If the ReRAM cell is unselected for erasing, the gate of the one of the series-connected select transistors having its drain connected to an electrode of the ReRAM device is supplied with a voltage potential insufficient to turn it on.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11355187B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11355187B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11355187B23</originalsourceid><addsrcrecordid>eNrjZFDzTS3JyE9RSMsvUkgtSizOzEtXSFQISg1y9FXITc3NL6pUSE7NyeFhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGxqamhhbmTkbGxKgBAA2uJsE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for erasing a ReRAM memory cell</title><source>esp@cenet</source><creator>Nguyen, Victor ; Dhaoui, Fethi ; McCollum, John L ; Xue, Fengliang</creator><creatorcontrib>Nguyen, Victor ; Dhaoui, Fethi ; McCollum, John L ; Xue, Fengliang</creatorcontrib><description>A method for erasing a ReRAM memory cell that includes a ReRAM device having a select circuit with two series-connected select transistors. The method includes determining if the ReRAM cell is selected for erasing. If the ReRAM cell is selected for erasing, the bit line node is biased at a first voltage potential, the source line node is biased at a second voltage potential greater than the first voltage potential and the gates of the series-connected select transistors are supplied with positive voltage pulses. The difference between the first voltage potential and the second voltage potential is sufficient to erase the ReRAM device in the ReRAM cell. If the ReRAM cell is unselected for erasing, the gate of the one of the series-connected select transistors having its drain connected to an electrode of the ReRAM device is supplied with a voltage potential insufficient to turn it on.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220607&amp;DB=EPODOC&amp;CC=US&amp;NR=11355187B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220607&amp;DB=EPODOC&amp;CC=US&amp;NR=11355187B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nguyen, Victor</creatorcontrib><creatorcontrib>Dhaoui, Fethi</creatorcontrib><creatorcontrib>McCollum, John L</creatorcontrib><creatorcontrib>Xue, Fengliang</creatorcontrib><title>Method for erasing a ReRAM memory cell</title><description>A method for erasing a ReRAM memory cell that includes a ReRAM device having a select circuit with two series-connected select transistors. The method includes determining if the ReRAM cell is selected for erasing. If the ReRAM cell is selected for erasing, the bit line node is biased at a first voltage potential, the source line node is biased at a second voltage potential greater than the first voltage potential and the gates of the series-connected select transistors are supplied with positive voltage pulses. The difference between the first voltage potential and the second voltage potential is sufficient to erase the ReRAM device in the ReRAM cell. If the ReRAM cell is unselected for erasing, the gate of the one of the series-connected select transistors having its drain connected to an electrode of the ReRAM device is supplied with a voltage potential insufficient to turn it on.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDzTS3JyE9RSMsvUkgtSizOzEtXSFQISg1y9FXITc3NL6pUSE7NyeFhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGxqamhhbmTkbGxKgBAA2uJsE</recordid><startdate>20220607</startdate><enddate>20220607</enddate><creator>Nguyen, Victor</creator><creator>Dhaoui, Fethi</creator><creator>McCollum, John L</creator><creator>Xue, Fengliang</creator><scope>EVB</scope></search><sort><creationdate>20220607</creationdate><title>Method for erasing a ReRAM memory cell</title><author>Nguyen, Victor ; Dhaoui, Fethi ; McCollum, John L ; Xue, Fengliang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11355187B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Nguyen, Victor</creatorcontrib><creatorcontrib>Dhaoui, Fethi</creatorcontrib><creatorcontrib>McCollum, John L</creatorcontrib><creatorcontrib>Xue, Fengliang</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nguyen, Victor</au><au>Dhaoui, Fethi</au><au>McCollum, John L</au><au>Xue, Fengliang</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for erasing a ReRAM memory cell</title><date>2022-06-07</date><risdate>2022</risdate><abstract>A method for erasing a ReRAM memory cell that includes a ReRAM device having a select circuit with two series-connected select transistors. The method includes determining if the ReRAM cell is selected for erasing. If the ReRAM cell is selected for erasing, the bit line node is biased at a first voltage potential, the source line node is biased at a second voltage potential greater than the first voltage potential and the gates of the series-connected select transistors are supplied with positive voltage pulses. The difference between the first voltage potential and the second voltage potential is sufficient to erase the ReRAM device in the ReRAM cell. If the ReRAM cell is unselected for erasing, the gate of the one of the series-connected select transistors having its drain connected to an electrode of the ReRAM device is supplied with a voltage potential insufficient to turn it on.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
title Method for erasing a ReRAM memory cell
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