Non-volatle memory with virtual ground voltage provided to unselected column lines during memory read operation

A memory includes virtual ground circuitry configured to generate a virtual ground voltage (greater than zero volts) at a virtual ground node, a memory array of resistive memory cells in which each resistive memory cell includes a select transistor and a resistive storage element and is coupled to a...

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Bibliographische Detailangaben

Hauptverfasser:	Choy, Jon Scott, Ramanan, Karthik
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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