Semiconductor device including an air spacer and a method for fabricating the same

A semiconductor device is provided including a substrate including a trench. A first conductive pattern is disposed within the trench. The first conductive pattern has a width smaller than a width of the trench. A first spacer extends along at least a portion of a side surface of the first conductiv...

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Bibliographische Detailangaben
Hauptverfasser: Chun, Jin-Hwan, Kim, Keun Nam, Hwang, Yoo Sang
Format: Patent
Sprache:eng
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