Semiconductor device including an air spacer and a method for fabricating the same

Semiconductor device including an air spacer and a method for fabricating the same

A semiconductor device is provided including a substrate including a trench. A first conductive pattern is disposed within the trench. The first conductive pattern has a width smaller than a width of the trench. A first spacer extends along at least a portion of a side surface of the first conductiv...

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Hauptverfasser: Chun, Jin-Hwan, Kim, Keun Nam, Hwang, Yoo Sang
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Chun, Jin-Hwan
Kim, Keun Nam
Hwang, Yoo Sang
description A semiconductor device is provided including a substrate including a trench. A first conductive pattern is disposed within the trench. The first conductive pattern has a width smaller than a width of the trench. A first spacer extends along at least a portion of a side surface of the first conductive pattern and the trench. A second spacer at least partially fills the trench adjacent to the first spacer. An air spacer is provided including a first portion between the first spacer and the second spacer, and a second portion disposed on the second spacer and the first portion. A width of the second portion of the air spacer is greater than a width of the first portion of the air spacer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device including an air spacer and a method for fabricating the same
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