IGBT chip having mixed gate structure

IGBT chip having mixed gate structure

An IGBT chip having a mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a source region (3) and a gate region. The gate region includes a planar gate region (1) and a trench gate region (2), which are respectively disposed at both sides of the sourc...

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Hauptverfasser: Zhu, Chunlin, Zhu, Liheng, Liu, Guoyou
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Zhu, Chunlin
Zhu, Liheng
Liu, Guoyou
description An IGBT chip having a mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a source region (3) and a gate region. The gate region includes a planar gate region (1) and a trench gate region (2), which are respectively disposed at both sides of the source region (3). A planar gate and a trench gate are compositely disposed on the same cell (16), thereby greatly improving chip density while retaining both trench gate's features of low on-state energy loss and high current density and planar gate's feature of wide safe operating area.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title IGBT chip having mixed gate structure
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