Memory arrays and methods used in forming a memory array

A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an insulator tier above the wordline tiers. The insulator tier comprises first insulator material comprising silicon, nitrogen, and one or more...

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Hauptverfasser: Pavlopoulos, Dimitrios, Nelson, Eldon, Dorhout, Justin B, Peterson, Joel D, Byers, Erik, Carlson, Merri L, Xu, Lifang, Hopkins, John D, Chary, Indra V, Tessariol, Paolo, Fazil, Damir, Lomeli, Nancy M
Format: Patent
Sprache:eng
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