Memory transistor with cavity structure

A memory transistor comprises a substrate comprising a first surface and a second surface opposing the first surface, the substrate further comprising a first trench having an opening formed in the first surface; a first dielectric layer formed on an inner surface of the first trench; a gate layer f...

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Bibliographische Detailangaben

Hauptverfasser:	Lin, Dingyou, Zhu, Rongfu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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