Resistance change device, manufacturing method for the same, and storage apparatus

Resistance change device, manufacturing method for the same, and storage apparatus

A resistance change device includes a first resistance change layer that occludes and discharges ions of at least one type, and resistance of the first resistance change layer, changes in accordance with an amount of the ions in such a manner that the resistance decreases when the ions are discharge...

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1. Verfasser: Noshiro, Hideyuki
Format: Patent
Sprache:eng
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ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator Noshiro, Hideyuki
description A resistance change device includes a first resistance change layer that occludes and discharges ions of at least one type, and resistance of the first resistance change layer, changes in accordance with an amount of the ions in such a manner that the resistance decreases when the ions are discharged and the resistance increases when the ions are occluded; a second resistance change layer that occludes and discharges the ions, and resistance of the second resistance change layer changes in accordance with the amount of the ions in such a manner that the resistance increases when the ions are discharged and the resistance decreases when the ions are occluded; and an ion conductive layer that carries the ions and is provided between the first resistance change layer and the second resistance change layer.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11328769B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11328769B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11328769B23</originalsourceid><addsrcrecordid>eNqNyz0OwjAMQOEsDAi4g9lhaCtBWUEg5gJzZSVOE4n8KHY4Px04ANNbvrdUw0DsWTBqAu0wTgSGPl7TDgLGalFLLT5OEEhcMmBTAXEEjGEmGA2wpILzhjljQam8VguLb6bNryu1vV2fl_uechqJM2qKJOPr0TRd2x8Pp3Pb_WO-A7c4Eg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Resistance change device, manufacturing method for the same, and storage apparatus</title><source>esp@cenet</source><creator>Noshiro, Hideyuki</creator><creatorcontrib>Noshiro, Hideyuki</creatorcontrib><description>A resistance change device includes a first resistance change layer that occludes and discharges ions of at least one type, and resistance of the first resistance change layer, changes in accordance with an amount of the ions in such a manner that the resistance decreases when the ions are discharged and the resistance increases when the ions are occluded; a second resistance change layer that occludes and discharges the ions, and resistance of the second resistance change layer changes in accordance with the amount of the ions in such a manner that the resistance increases when the ions are discharged and the resistance decreases when the ions are occluded; and an ion conductive layer that carries the ions and is provided between the first resistance change layer and the second resistance change layer.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220510&amp;DB=EPODOC&amp;CC=US&amp;NR=11328769B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220510&amp;DB=EPODOC&amp;CC=US&amp;NR=11328769B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Noshiro, Hideyuki</creatorcontrib><title>Resistance change device, manufacturing method for the same, and storage apparatus</title><description>A resistance change device includes a first resistance change layer that occludes and discharges ions of at least one type, and resistance of the first resistance change layer, changes in accordance with an amount of the ions in such a manner that the resistance decreases when the ions are discharged and the resistance increases when the ions are occluded; a second resistance change layer that occludes and discharges the ions, and resistance of the second resistance change layer changes in accordance with the amount of the ions in such a manner that the resistance increases when the ions are discharged and the resistance decreases when the ions are occluded; and an ion conductive layer that carries the ions and is provided between the first resistance change layer and the second resistance change layer.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyz0OwjAMQOEsDAi4g9lhaCtBWUEg5gJzZSVOE4n8KHY4Px04ANNbvrdUw0DsWTBqAu0wTgSGPl7TDgLGalFLLT5OEEhcMmBTAXEEjGEmGA2wpILzhjljQam8VguLb6bNryu1vV2fl_uechqJM2qKJOPr0TRd2x8Pp3Pb_WO-A7c4Eg</recordid><startdate>20220510</startdate><enddate>20220510</enddate><creator>Noshiro, Hideyuki</creator><scope>EVB</scope></search><sort><creationdate>20220510</creationdate><title>Resistance change device, manufacturing method for the same, and storage apparatus</title><author>Noshiro, Hideyuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11328769B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Noshiro, Hideyuki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Noshiro, Hideyuki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Resistance change device, manufacturing method for the same, and storage apparatus</title><date>2022-05-10</date><risdate>2022</risdate><abstract>A resistance change device includes a first resistance change layer that occludes and discharges ions of at least one type, and resistance of the first resistance change layer, changes in accordance with an amount of the ions in such a manner that the resistance decreases when the ions are discharged and the resistance increases when the ions are occluded; a second resistance change layer that occludes and discharges the ions, and resistance of the second resistance change layer changes in accordance with the amount of the ions in such a manner that the resistance increases when the ions are discharged and the resistance decreases when the ions are occluded; and an ion conductive layer that carries the ions and is provided between the first resistance change layer and the second resistance change layer.</abstract><oa>free_for_read</oa></addata></record>
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subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Resistance change device, manufacturing method for the same, and storage apparatus
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T02%3A53%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Noshiro,%20Hideyuki&rft.date=2022-05-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11328769B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true