Semiconductor device containing tubular liner spacer for lateral confinement of self-aligned silicide portions and methods of forming the same

A semiconductor structure includes a semiconductor channel of a first conductivity type located between a first and second active regions having a doping of a second conductivity type that is opposite of the first conductivity type, a gate stack structure that overlies the semiconductor channel, and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kita, Yosuke, Amano, Fumitaka
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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