Foundational supports within integrated assemblies

Some embodiments include an integrated assembly having a base (e.g., a monocrystalline silicon wafer), and having memory cells over the base and along channel-material-pillars. A conductive structure is between the memory cells and the base. The channel-material-pillars are coupled with the conducti...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Clampitt, Darwin A, King, Matthew J, Hopkins, John D, Barclay, M. Jared
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Some embodiments include an integrated assembly having a base (e.g., a monocrystalline silicon wafer), and having memory cells over the base and along channel-material-pillars. A conductive structure is between the memory cells and the base. The channel-material-pillars are coupled with the conductive structure. A foundational structure extends into the base and projects upwardly to a level above the conductive structure. The foundational structure locks the conductive structure to the base to provide foundational support to the conductive structure.