Methods of forming a capacitor, semiconductor device, and fine pattern, and semiconductor device formed by the methods
A semiconductor device includes a transistor on a semiconductor substrate including a first area and a second area, and having a gate structure and an impurity area, a first interlayer insulating film covering the transistor, and having a contact plug electrically connected to the impurity area, a c...
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| creator | Yim, Sungsoo Kang, Byeongmoo Park, Sejin Choi, Yoonyoung Koo, Seongmo Bae, Jinwoo |
| description | A semiconductor device includes a transistor on a semiconductor substrate including a first area and a second area, and having a gate structure and an impurity area, a first interlayer insulating film covering the transistor, and having a contact plug electrically connected to the impurity area, a capacitor including a lower electrode on the first interlayer insulating film in the second area and electrically connected to the contact plug, a dielectric film coating a surface of the lower electrode, and an upper electrode on the dielectric film, and a support layer in contact with an upper side surface of the lower electrode to support the lower electrode, and extending to the first area, in which the support layer has a step between the first area and the second area. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Methods of forming a capacitor, semiconductor device, and fine pattern, and semiconductor device formed by the methods |
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