Temperature compensation for silicon resistor using interconnect metal

An integrated circuit that can include a driver having a first driver output, and a first resistance coupled between a first node coupled to the first driver output and a second node. The first resistance can include a process resistor including a first material having a first temperature coefficien...

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Bibliographische Detailangaben
Hauptverfasser: Seaberg, Charles Eric, Gonzalez, Octavio A
Format: Patent
Sprache:eng
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